Twin and grain boundary in InP: A synchrotron radiation study
Han YJ; Jiang JH; Wang ZG; Liu XL; Jiao JH; Tian YL; Lin LY; Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
1998
会议名称Symposium on Applications of Synchrotron Radiation Techniques to Materials Science IV
会议录名称APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV, 524
页码77-80
会议日期APR 13-17, 1998
会议地点SAN FRANCISCO, CA
出版地506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者MATERIALS RESEARCH SOCIETY
ISSN0272-9172
ISBN1-55899-430-0
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed.
学科领域半导体材料
主办者Phys Electr.; Blake Ind.; Luxel Corp.; Lawrence Livermore Natl Lab, Dept Chem & Mat Sci.; Lawrence Berkeley Natl Lab, Adv Light Source.; Brookhaven Natl Lab, Natl Synchrotron Light Source.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13843
专题中国科学院半导体研究所(2009年前)
通讯作者Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式
GB/T 7714
Han YJ,Jiang JH,Wang ZG,et al. Twin and grain boundary in InP: A synchrotron radiation study[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1998:77-80.
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