1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors
Zhong P; Lin YW; Li LH; Xu YQ; Wei Z; Wu RH; Lin YW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
2001
会议名称Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
会议录名称APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580
页码73-77
会议日期NOV 12-15, 2001
会议地点BEIJING, PEOPLES R CHINA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-4310-7
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.
关键词Operation
学科领域光电子学
主办者SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13657
专题中国科学院半导体研究所(2009年前)
通讯作者Lin YW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式
GB/T 7714
Zhong P,Lin YW,Li LH,et al. 1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2001:73-77.
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