Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

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	Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
	Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB; Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
	2002
会议名称	29th IEEE Photovoltaic Specialists Conference
会议录名称	CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002
页码	1182-1185
会议日期	MAY 19-24, 2002
会议地点	NEW ORLEANS, LA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7471-1
部门归属	chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china
摘要	Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).
关键词	Silicon Raman
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13617
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhang SB,Xu YY,Hu ZH,et al. Characterization of diphasic nc-Si/a-Si : H thin films and solar cells[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:1182-1185.

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