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Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
Li GD (Li Guodong); Yin H (Yin Hong); Zhu QS (Zhu Qinsheng); Sakaki H (Sakaki Hiroyuki); Jiang C (Jiang Chao); Li, GD, Natl Ctr Nanosci & Technol, 11 Beiyitiao, Beijing 100190, Peoples R China. E-mail Address: jiangch@nanoctr.cn
2010
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume108Issue:4Pages:Art. No. 043702
AbstractWe have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.
metadata_24国际
KeywordPhotoluminescence Heterojunctions Spectroscopy Systems Physics
Subject Area半导体材料
Funding OrganizationThis work is partially supported by the "Hundred Talents program" of Chinese Academy of Sciences and partially by the National Natural Foundation of China with Grant No. 60746002.
Indexed BySCI
Language英语
Date Available2010-10-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13548
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLi, GD, Natl Ctr Nanosci & Technol, 11 Beiyitiao, Beijing 100190, Peoples R China. E-mail Address: jiangch@nanoctr.cn
Recommended Citation
GB/T 7714
Li GD ,Yin H ,Zhu QS ,et al. Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas[J]. JOURNAL OF APPLIED PHYSICS,2010,108(4):Art. No. 043702.
APA Li GD ,Yin H ,Zhu QS ,Sakaki H ,Jiang C ,&Li, GD, Natl Ctr Nanosci & Technol, 11 Beiyitiao, Beijing 100190, Peoples R China. E-mail Address: jiangch@nanoctr.cn.(2010).Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas.JOURNAL OF APPLIED PHYSICS,108(4),Art. No. 043702.
MLA Li GD ,et al."Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas".JOURNAL OF APPLIED PHYSICS 108.4(2010):Art. No. 043702.
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