SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition
Xu DP; Yang H; Li JB; Zhao DG; Li SF; Zhuang SM; Wu RH; Chen Y; Li GH; Yang H,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
2000
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume76Issue:21Pages:3025-3027
AbstractThe optical properties of cubic GaN films have been investigated in the temperature range of 10-300 K. Five peaks were observed at 10 K. From the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 eV) to donor-acceptor pair (DAP) transitions. Furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 eV. The intensities of DAP transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00921-9].
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy Photoluminescence
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12606
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorYang H,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Xu DP,Yang H,Li JB,et al. Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition[J]. APPLIED PHYSICS LETTERS,2000,76(21):3025-3027.
APA Xu DP.,Yang H.,Li JB.,Zhao DG.,Li SF.,...&Yang H,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China..(2000).Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition.APPLIED PHYSICS LETTERS,76(21),3025-3027.
MLA Xu DP,et al."Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition".APPLIED PHYSICS LETTERS 76.21(2000):3025-3027.
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