SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching
Xu D; Yang H; Zhang SM; Zheng LX; Zhao DG; Li SF; Wang YT; Wu RH; Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
2000
Source PublicationTHIN SOLID FILMS
ISSN0040-6090
Volume372Issue:1-2Pages:25-29
AbstractWe measured the depth profiling of photoluminescence (PL) in cubic GaN films. The depth-resolved PL of normal grown GaN layers showed that the near-band-edge luminescence intensities of both cubic and wurtzite domains remained constant only until an etching depth of up to 2.7 mu m, but their ratio remained unchanged at all etching depths. Moreover, when a thin In0.1Ga0.9N layer was sandwiched between two GaN layers, the content of the wurtzite domains increased, and its distribution showed a dependence on thickness. As the reactive ion etching depth increased, the PL intensity ratio of cubic GaN to wurtzite domains increased. Based on the distribution, the strain relaxation, instead of the instability of cubic GaN at high temperature, was attributed to the origin of wurtzite domains. (C) 2000 Elsevier Science S.A. All rights reserved.
metadata_83chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy Light-emitting-diodes Yellow Luminescence Growth Heterostructure Nitride
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12450
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorXu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Xu D,Yang H,Zhang SM,et al. Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching[J]. THIN SOLID FILMS,2000,372(1-2):25-29.
APA Xu D.,Yang H.,Zhang SM.,Zheng LX.,Zhao DG.,...&Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China..(2000).Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching.THIN SOLID FILMS,372(1-2),25-29.
MLA Xu D,et al."Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching".THIN SOLID FILMS 372.1-2(2000):25-29.
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