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A geometrical model of GaN morphology in initial growth stage
Yuan HR; Chen Z; Lu DC; Liu XL; Han PD; Wang XH; Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume234Issue:1Pages:115-120
AbstractBased on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordComputer Simulation Crystal Morphology Atomic Force Microscopy Nitrides Ain Buffer Layer Sapphire
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12042
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Yuan HR,Chen Z,Lu DC,et al. A geometrical model of GaN morphology in initial growth stage[J]. JOURNAL OF CRYSTAL GROWTH,2002,234(1):115-120.
APA Yuan HR.,Chen Z.,Lu DC.,Liu XL.,Han PD.,...&Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).A geometrical model of GaN morphology in initial growth stage.JOURNAL OF CRYSTAL GROWTH,234(1),115-120.
MLA Yuan HR,et al."A geometrical model of GaN morphology in initial growth stage".JOURNAL OF CRYSTAL GROWTH 234.1(2002):115-120.
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