SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A novel line-order of InAs quantum dots on GaAs
Meng XQ; Jin P; Xu B; Li CM; Zhang ZY; Wang ZG; Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume241Issue:1-2Pages:69-73
AbstractA novel line-order of InAs quantum dots (QDs) along the [1, 1, 0] direction on GaAs substrate has been prepared by self-organized growth. After 2.5 monolayer InAs deposition, QDs in the first layer of multi-layer samples started to gather in a line. Owing to the action of strong stress between layers, almost all the dots of the fourth layer gathered in lines. The dots lining up tightly are actually one-dimensional superlattice of QDs, of which the density of electronic states is different from that of isolated QDs or quantum wires. The photoluminescence spectra of our multi-layer QD sample exhibited a feature of very broad band so that it is suitable for the active medium of super luminescent diode. The reason of dots lining up is attributed to the hill-and-valley structure of the buffer, anisotropy and different diffusion rates in the different directions on the buffer and strong stress between QD layers. (C) 2002 Published by Elsevier Science B. V.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordLow Dimensional Structures Strain Molecular Beam Epitaxy Quantum Dots Semiconducting Iii-v Materials Shape Transition Photoluminescence Fabrication Deposition Wires Situ
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11878
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorMeng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Meng XQ,Jin P,Xu B,et al. A novel line-order of InAs quantum dots on GaAs[J]. JOURNAL OF CRYSTAL GROWTH,2002,241(1-2):69-73.
APA Meng XQ.,Jin P.,Xu B.,Li CM.,Zhang ZY.,...&Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).A novel line-order of InAs quantum dots on GaAs.JOURNAL OF CRYSTAL GROWTH,241(1-2),69-73.
MLA Meng XQ,et al."A novel line-order of InAs quantum dots on GaAs".JOURNAL OF CRYSTAL GROWTH 241.1-2(2002):69-73.
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