SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of strain on annealing effects of In(Ga)As quantum dots
Zhang YC; Wang ZG; Xu B; Liu FQ; Chen YH; Dowd P; Zhang YC,Nanyang Technol Univ,Sch Elect & Elect Engn,Photon Lab 1,Nanyang Ave,Singapore 639798,Singapore.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume244Issue:2Pages:136-141
AbstractPost-growth rapid thermal annealing has been performed with In(Ga)As quantum dots (QDs) at different strain statuses. It is confirmed that the strain-enhanced interdiffusion decreases the inhomogeneous size distribution. The preferential lateral interdiffusion of QDs during annealing was observed. we attribute it to the naturally anisotropic strain distribution in/around the dots and the saturation of strain difference between the base boundary and the top of the dots. There exist strain-enhanced mechanism and vacancy diffusion enhanced mechanism during the annealing. As to which one dominates the QD interdiffusion depends on the thickness of capping layer and the annealing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
metadata_83nanyang technol univ, sch elect & elect engn, photon lab 1, singapore 639798, singapore; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordLow Dimensional Structures Strain Molecular Beam Epitaxy Quantum Dots Electronic-structure Photoluminescence Interdiffusion Transitions Spectra
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11786
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang YC,Nanyang Technol Univ,Sch Elect & Elect Engn,Photon Lab 1,Nanyang Ave,Singapore 639798,Singapore.
Recommended Citation
GB/T 7714
Zhang YC,Wang ZG,Xu B,et al. Influence of strain on annealing effects of In(Ga)As quantum dots[J]. JOURNAL OF CRYSTAL GROWTH,2002,244(2):136-141.
APA Zhang YC.,Wang ZG.,Xu B.,Liu FQ.,Chen YH.,...&Zhang YC,Nanyang Technol Univ,Sch Elect & Elect Engn,Photon Lab 1,Nanyang Ave,Singapore 639798,Singapore..(2002).Influence of strain on annealing effects of In(Ga)As quantum dots.JOURNAL OF CRYSTAL GROWTH,244(2),136-141.
MLA Zhang YC,et al."Influence of strain on annealing effects of In(Ga)As quantum dots".JOURNAL OF CRYSTAL GROWTH 244.2(2002):136-141.
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