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Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films
Liang JR (Liang Ji-ran); Hu M (Hu Ming); Wang XD (Wang Xiao-dong); Li GK (Li Gui-ke); Kan Q (Kan Qiang); Ji A (Ji An); Yang FH (Yang Fu-hua); Liu J (Liu Jian); Wu NJ (Wu Nan-jian); Chen HD (Chen Hong-da); Liang, JR, Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China. 电子邮箱地址: liang_jiran@tju.edu.cn
2010
Source PublicationSPECTROSCOPY AND SPECTRAL ANALYSIS
Volume30Issue:4Pages:1002-1007
AbstractNano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.
metadata_24国内
KeywordNano Vo2 Thin Films
Subject Area微电子学
Indexed BySCI
Language中文
Date Available2010-04-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11198
Collection半导体集成技术工程研究中心
Corresponding AuthorLiang, JR, Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China. 电子邮箱地址: liang_jiran@tju.edu.cn
Recommended Citation
GB/T 7714
Liang JR ,Hu M ,Wang XD ,et al. Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2010,30(4):1002-1007.
APA Liang JR .,Hu M .,Wang XD .,Li GK .,Kan Q .,...&Liang, JR, Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China. 电子邮箱地址: liang_jiran@tju.edu.cn.(2010).Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films.SPECTROSCOPY AND SPECTRAL ANALYSIS,30(4),1002-1007.
MLA Liang JR ,et al."Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films".SPECTROSCOPY AND SPECTRAL ANALYSIS 30.4(2010):1002-1007.
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