SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Subject Area半导体材料
ф2”和 ф3”非掺Si-GaAs单晶(片)研究
林兰英; 曹福; 白玉珂; 惠峰; 卜俊鹏
Subtype院科技进步奖
Award Level二等奖
1996
KeywordSi-gaas
Language中文
Document Type成果
Identifierhttp://ir.semi.ac.cn/handle/172111/11086
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
林兰英,曹福,白玉珂,等. ф2”和 ф3”非掺Si-GaAs单晶(片)研究. 1996.
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