SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
Lei W; Chen YH; Wang YL; Huang XQ; Zhao C; Liu JQ; Xu B; Jin P; Zeng YP; Wang ZG; Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
2005
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume286Issue:1Pages:23-27
AbstractWe report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordDefects Lateral Composition Modulation Photoluminescence Molecular Beam Epitaxy Quantum Wires Semiconductor Iii-v Material Dots Heterostructures Inalas/inp(001) Spectroscopy Wavelength Inp(001)
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10916
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
Recommended Citation
GB/T 7714
Lei W,Chen YH,Wang YL,et al. Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness[J]. JOURNAL OF CRYSTAL GROWTH,2005,286(1):23-27.
APA Lei W.,Chen YH.,Wang YL.,Huang XQ.,Zhao C.,...&Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn.(2005).Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness.JOURNAL OF CRYSTAL GROWTH,286(1),23-27.
MLA Lei W,et al."Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness".JOURNAL OF CRYSTAL GROWTH 286.1(2005):23-27.
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