SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Selective growth of InAs islands on patterned GaAs (100) substrate
Cui CX; Chen YH; Ren YY; Xu B; Jin P; Zhao C; Wang ZG; Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
2006
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
ISSN0749-6036
Volume39Issue:5Pages:446-453
AbstractBy a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa(1-x)As strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 Elsevier Ltd. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordPatterned Substrate Molecular Beam Epitaxy Quantum Dots Inas Gaas Ingaas Assembled Quantum Dots Molecular-beam Epitaxy Fabrication
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10644
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorCui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
Recommended Citation
GB/T 7714
Cui CX,Chen YH,Ren YY,et al. Selective growth of InAs islands on patterned GaAs (100) substrate[J]. SUPERLATTICES AND MICROSTRUCTURES,2006,39(5):446-453.
APA Cui CX.,Chen YH.,Ren YY.,Xu B.,Jin P.,...&Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn.(2006).Selective growth of InAs islands on patterned GaAs (100) substrate.SUPERLATTICES AND MICROSTRUCTURES,39(5),446-453.
MLA Cui CX,et al."Selective growth of InAs islands on patterned GaAs (100) substrate".SUPERLATTICES AND MICROSTRUCTURES 39.5(2006):446-453.
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