Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

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	Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
	Xu Y; Zhu XP; Gan QQ; Song GF; Cao Q; Guo, L; Li YZ; Chen LH; Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2005
会议名称	Conference on Semiconductor and Organic Optoelectronic Materials and Devices
会议录名称	SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码	5624: 221-225
会议日期	NOV 09-11, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-5578-4
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.
关键词	Valence Band Mixing
学科领域	半导体物理
主办者	SPIE.; Chinese Opt Soc.; China Inst Commun.; Beijing Assoc Commun & Informat.; Beijing Univ Posts & Telecommun.; IEEE COMSOC.; IEEE LEOS.; Commun Inst China, Opt Commun Tech Comm.; Opt Soc Amer.; Tsinghua Univ.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10134
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Xu Y,Zhu XP,Gan QQ,et al. Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2005:5624: 221-225.

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