Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
Xu Y; Zhu XP; Song GF; Cao Q; Guo L; Li YZ; Chen LH; Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
2005
会议名称Conference on Semiconductor and Organic Optoelectronic Materials and Devices
会议录名称SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码5624: 91-95
会议日期NOV 09-11, 2004
会议地点Beijing, PEOPLES R CHINA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-5578-4
部门归属chinese acad sci, inst semicond, beijing 100864, peoples r china
摘要Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.
关键词Quantum Well Intermixing
学科领域半导体物理
主办者SPIE.; Chinese Opt Soc.; China Inst Commun.; Beijing Assoc Commun & Informat.; Beijing Univ Posts & Telecommun.; IEEE COMSOC.; IEEE LEOS.; Commun Inst China, Opt Commun Tech Comm.; Opt Soc Amer.; Tsinghua Univ.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/10132
专题中国科学院半导体研究所(2009年前)
通讯作者Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
推荐引用方式
GB/T 7714
Xu Y,Zhu XP,Song GF,et al. Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2005:5624: 91-95.
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