Circuit design and simulation of a CMOS-based preamplifier for brain neural signals

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Circuit design and simulation of a CMOS-based preamplifier for brain neural signals
	Sui XH; Pei WH; Gu M; Liu JB; Chen HD; Sui, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2005
会议名称	1st International Conference on Neural Interface and Control (CNIC)
会议录名称	2005 First International Conference on Neural Interface and Control Proceedings
页码	108-110
会议日期	MAY 26-28, 2005
会议地点	Wuhan, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8902-6
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.
关键词	Bci
学科领域	光电子学
主办者	Huazhong Univ Sci & Technol.; Arizona State Univ.; Tsinghua Univ.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10124
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sui, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Sui XH,Pei WH,Gu M,et al. Circuit design and simulation of a CMOS-based preamplifier for brain neural signals[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:108-110.

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